A channel is formed between the Drain terminal and the Soucre terminal. The effect of the electric field through the SiO layer will pull electrons from the n+ layer into the p layer. When a positive voltage (V GS > 0) is applied between the G gate terminal and the S pin. Although this layer is thin, it has great electrical insulation The G pin is completely isolated from the rest of the semiconductor structure by the SiO layer. Mosfet has 3 pins: Source (S), Drain (D) and Gate control pin (G). The basic advantage of MOSFETs is the ability to control the opening and closing by voltage pulses in the gate circuit. Between the Gate metal layer and the n+, p junctions there is a silicon oxide (SiO) layer. The figure below shows the structure of an npn-type MOSFET. Widely used in small power applications (several kW) As a result, the power loss during conduction is large, which makes it impossible to develop into a large power device. However, when the it conducts, its RON resistance is large. ![]() MOSFETs require low gate power consumption, fast closing speed, and low switching losses. Unlike BJT transistors which are controlled by current, Mosfets are controlled by voltage. MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) is a type of transistor with fast switching and low switching losses. 5.3 Control circuit using totem-pole circuit.
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